| PART |
Description |
Maker |
| HA3-2625-5 HA9P2625-5 HA9P2625-9 HA-2620 HA-2625 H |
From old datasheet system
100MHz High Input Impedance Very Wideband Uncompensated Operational Amplifiers
100MHz/ High Input Impedance/ Very Wideband/ Uncompensated Operational Amplifiers
INDUCTOR PWR TOROID 2.5UH SMD
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers OP-AMP, 7000 uV OFFSET-MAX, 100 MHz BAND WIDTH, PDSO8
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HA2-2620-2 HA2-2625-5 |
100MHz, High Input Impedance, Very Wideband, Uncompensated Operational Amplifiers
|
Intersil Corporation
|
| T-12073 T-12072 T-12059 T-12009 T-12002 T-12052 T- |
Wideband RF Impedance Matching Transformers
|
Rhombus Industries Inc.
|
| HA7-2840883 FN3594 HA1-2840_883 HA1-2840883 HA7-28 |
From old datasheet system
Very High Slew Rate Wideband Operational Amplifier
Very High Slew Rate/ Wideband Operational Amplifier
Very High Slew Rate,
Wideband Operational Amplifier(高转换率、宽带运算放大器)
Very High Slew Rate, Wideband Operational Amplifier 甚高摆率，宽带运算放大器
Very High Slew Rate, Wideband Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, 500 MHz BAND WIDTH, CDIP14
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 2SK246 |
Field Effect Transistor Silicon N Channel Junction Type For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
|
TOSHIBA
|
| HA2-2525-5 HA3-2525-5 HA7-2525-5 HA9P2525-5 HA2520 |
20MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers 0MHz，高压摆率，无偿，高输入阻抗，运算放大器
20MHz/ High Slew Rate/ Uncompensated/ High Input Impedance/ Operational Amplifiers
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| 2SK246 2SK246GR 2SK246BL K246 2SK246Y |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT, IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MAX8743EEI-T |
Dual, High-Efficiency, Step-Down Controller with High Impedance in Shutdown
|
MAXIM INTEGRATED PRODUCTS INC
|
| GL35-00 GL35-01 GL35-02 GL35-04 GL35-06 GL35-08 GL |
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 120uF; Voltage: 6.3V; Case Size: 6.3x7 mm; Packaging: Bulk 在行高硅桥式整流器电流（电压- 5000伏特电流- 155安培
IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) 在行高硅桥式整流器电流（电压- 5000伏特电流- 1535安培
IN-LINE HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 15 to 35 Amperes) 在行高硅桥式整流器电流（电压- 5000伏特电流- 155安培
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 22uF; Voltage: 6.3V; Case Size: 5x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 68uF; Voltage: 6.3V; Case Size: 4x11 mm; Packaging: Bulk
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 56uF; Voltage: 6.3V; Case Size: 5x7 mm; Packaging: Bulk
XTAL CER SMT 6X3.5 2PAD
Aluminum Electrolytic Radial Lead Low Impedance High Reliability Capacitor; Capacitance: 1200uF; Voltage: 6.3V; Case Size: 8x20 mm; Packaging: Bulk
LED Panel Indicator; LED Color:Yellow; Luminous Intensity:40foot lambert; Forward Current:8.5mA; Forward Voltage:125V; Operating Temperature Range:-25 C to 85 C; Color:Yellow; Leaded Process Compatible:No RoHS Compliant: No
|
Transys Electronics, Ltd.
Transys Electronics Ltd.
TRSYS
|
| AGB3311 AGB3311S24Q1 AGB3311_REV_1.0 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block
50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block
50蟹 High Linearity Low Noise Internally Biased Wideband Gain Block
50з High Linearity Low Noise Internally Biased Wideband Gain Block
From old datasheet system
|
ANADIGICS[ANADIGICS, Inc]
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| KH103 |
Fast Settling/ High Current Wideband Op Amp
Fast Settling, High Current Wideband Op Amp
From old datasheet system
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
